NASA Logo

NTRS

NTRS - NASA Technical Reports Server

Collections About News Help Login
Back to Results
Neutron and gamma irradiation effects on power semiconductor switchesThe performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.
Document ID
19900015962
Acquisition Source
Legacy CDMS
Document Type
Technical Memorandum (TM)
Authors
Schwarze, G. E. (NASA Lewis Research Center Cleveland, OH., United States)
Frasca, A. J. (Wittenberg Univ. Springfield, OH., United States)
Date Acquired
September 6, 2013
Publication Date
August 1, 1990
Subject Category
Electronics And Electrical Engineering
Report/Patent Number
NAS 1.15:103200
NASA-TM-103200
E-5598
Meeting Information
Meeting: Intersociety Energy Conversion Engineering Conference
Location: Reno, NV
Country: United States
Start Date: August 12, 1990
End Date: August 17, 1990
Sponsors: AIChE, ASME, ANS, IEEE, SAE, ACS, AIAA
Accession Number
90N25278
Funding Number(s)
PROJECT: RTOP 590-13-31
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

Related Records

There are no records associated with this record.
No Preview Available