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Improving the Reliability and Modal Stability of High Power 870 nm AlGaAs CSP Laser Diodes for Applications to Free Space Communication SystemsThe operating characteristics (power-current, beam divergence, etc.) and reliability assessment of high-power CSP lasers is discussed. The emission wavelength of these lasers was optimized at 860 to 880 nm. The operational characteristics of a new laser, the inverse channel substrate planar (ICSP) laser, grown by metalorganic chemical vapor deposition (MOCVD), is discussed and the reliability assessment of this laser is reported. The highlights of this study include a reduction in the threshold current value for the laser to 15 mA and a degradation rate of less than 2 kW/hr for the lasers operating at 60 mW of peak output power.
Document ID
19910009100
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Authors
Connolly, J. C. (David Sarnoff Research Center Princeton, NJ, United States)
Alphonse, G. A. (David Sarnoff Research Center Princeton, NJ, United States)
Carlin, D. B. (David Sarnoff Research Center Princeton, NJ, United States)
Ettenberg, M. (David Sarnoff Research Center Princeton, NJ, United States)
Date Acquired
September 6, 2013
Publication Date
March 1, 1991
Publication Information
Publisher: NASA
Subject Category
Lasers And Masers
Report/Patent Number
NAS 1.26:4345
NASA-CR-4345
Accession Number
91N18413
Funding Number(s)
CONTRACT_GRANT: NAS1-18226
PROJECT: RTOP 506-44-21-01
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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