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Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral regionA planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.
Document ID
19890016827
Acquisition Source
Legacy CDMS
Document Type
Contractor Report (CR)
Date Acquired
September 6, 2013
Publication Date
August 27, 1987
Subject Category
Instrumentation And Photography
Report/Patent Number
NASA-CR-183420
NAS 1.26:183420
Accession Number
89N26198
Funding Number(s)
CONTRACT_GRANT: NAS5-30043
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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