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Electron beam induced damage in PECVD Si3N4 and SiO2 films on InPPhosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectic. The electron beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.
Document ID
19900011077
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Pantic, Dragan M.
(Cincinnati Univ. OH., United States)
Kapoor, Vik J.
(Cincinnati Univ. OH., United States)
Young, Paul G.
(Cincinnati Univ. OH., United States)
Williams, Wallace D.
(NASA Lewis Research Center Cleveland, OH., United States)
Dickman, John E.
(NASA Lewis Research Center Cleveland, OH, United States)
Date Acquired
September 6, 2013
Publication Date
March 1, 1990
Subject Category
Mechanical Engineering
Report/Patent Number
E-5356
NASA-TM-102544
NAS 1.15:102544
Meeting Information
Meeting: Dielectric Films on Compound Semiconductors Symposium
Location: Honolulu, HI
Country: United States
Start Date: October 18, 1987
End Date: October 23, 1987
Sponsors: The Electrochemical Society
Accession Number
90N20393
Funding Number(s)
PROJECT: RTOP 506-44-21
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.
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